Terminal configuration and semiconductor device

ABSTRACT

There is provided a terminal that includes a first conductive layer; a wiring layer on the first conductive layer; a second conductive layer on the wiring layer; and a conductive bonding layer which is in contact with a bottom surface and a side surface of the first conductive layer, a side surface of the wiring layer, a portion of a side surface of the second conductive layer, and a portion of a bottom surface of the second conductive layer, wherein an end portion of the second conductive layer protrudes from an end portion of the first conductive layer and an end portion of the wiring layer, and wherein the conductive bonding layer is in contact with a bottom surface of the end portion of the second conductive layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation application of U.S. application Ser.No. 17/003,124, filed Aug. 26, 2020, which was based upon and claims thebenefit of priority from Japanese Patent Application Nos. 2019-174862and 2019-198563, which were filed on Sep. 26, 2019, and Oct. 31, 2019,respectively. The entire contents of Japanese Patent Application Nos.2019-174862 and 2019-198563 are incorporated herein by reference.

TECHNICAL FIELD

The present disclosure relates to a terminal and a semiconductor device.

BACKGROUND

In recent years, there exist leadless package-type semiconductor devicessuch as a small outline non-leaded package (SON package), a quad flatnon-leaded package (QFN package), and the like. The leadlesspackage-type semiconductor device is advantageous for miniaturizing andthinning of the semiconductor device because a terminal for externalconnection does not protrude from a sealing resin which seals asemiconductor element.

The leadless package-type semiconductor device includes, for example, asemiconductor element, a lead frame, and a sealing resin, wherein thelead frame has a die pad portion and a plurality of lead portions. Thedie pad portion supports the semiconductor element. The plurality oflead portions are terminals which are electrically connected to thesemiconductor element via respective metal wirings and are used forexternal connection when the semiconductor device is mounted on acircuit board such as an electronic device or the like. The sealingresin covers the semiconductor element. For manufacturing such asemiconductor device, for example, a molded array packaging (MAP) methodis used. In the MAP method, a plurality of semiconductor elements arecollectively sealed with the sealing resin on the lead frame, and thencut into individual pieces by dicing.

If the lead frame, which is a terminal for external connection, is madeof, for example, copper, the copper may be oxidized, resulting inadhesion failure with a conductive bonding material such as solder orthe like. Further, in the case of an in-vehicle application, it isnecessary to form copper to be thick, but if the copper is made toothick, a support member may be warped, which results in adhesion failurewith the sealing resin. Such adhesion failure causes a reduction inyield of semiconductor devices and malfunctioning.

SUMMARY

Some embodiments of the present disclosure provide a terminal forexternal connection which suppresses adhesion failure and securesreliability. Further, another embodiment of the present disclosureprovides a semiconductor device including the terminal. In addition, yetanother embodiment of the present disclosure provides a method ofmanufacturing the terminal.

According to one embodiment of the present disclosure, a terminalincludes: a first conductive layer; a wiring layer on the firstconductive layer; a second conductive layer on the wiring layer; and aconductive bonding layer which is in contact with a bottom surface and aside surface of the first conductive layer, a side surface of the wiringlayer, a portion of a side surface of the second conductive layer, and aportion of a bottom surface of the second conductive layer, wherein anend portion of the second conductive layer protrudes from an end portionof the first conductive layer and an end portion of the wiring layer,and wherein the conductive bonding layer is in contact with a bottomsurface of the end portion of the second conductive layer.

According to another embodiment of the present disclosure, asemiconductor device includes: a terminal; a semiconductor elementelectrically connected to the terminal; and a resin covering theterminal and the semiconductor element, wherein the terminal includes: afirst conductive layer; a second conductive layer; a wiring layerbetween the first conductive layer and the second conductive layer; anda conductive bonding layer which is in contact with the first conductivelayer, the wiring layer, and the second conductive layer, wherein an endportion of the second conductive layer protrudes from an end portion ofthe first conductive layer and an end portion of the wiring layer, andwherein the conductive bonding layer is in contact with the end portionof the second conductive layer.

According to another embodiment of the present disclosure, a method ofmanufacturing a terminal includes: forming a first conductive layer;forming a first resin covering the first conductive layer; grinding thefirst resin to expose a top surface of the first conductive layer;forming a wiring layer which is in contact with the first conductivelayer; forming a second conductive layer on the wiring layer; forming asecond resin which covers the first resin, the wiring layer, and thesecond conductive layer; removing a portion of the first conductivelayer, a portion of the wiring layer, a portion of the second conductivelayer, and a portion of the second resin so that an end portion of thesecond conductive layer protrudes from an end portion of the firstconductive layer and an end portion of the wiring layer; and forming aconductive bonding layer which is in contact with the first conductivelayer, the wiring layer, and the second conductive layer.

According to another embodiment of the present disclosure, a method ofmanufacturing a semiconductor device includes the method ofmanufacturing the terminal and forming a semiconductor elementelectrically connected to the wiring layer after forming the wiringlayer and before forming the second conductive layer.

BRIEF DESCRIPTION OF DRAWINGS

The accompanying drawings, which are incorporated in and constitute apart of the specification, illustrate embodiments of the presentdisclosure, and together with the general description given above andthe detailed description of the embodiments given below, serve toexplain the principles of the present disclosure.

FIG. 1 is a schematic plan view of a semiconductor device including aterminal according to an embodiment of the present disclosure.

FIG. 2 is a schematic bottom view of the semiconductor device includinga terminal according to an embodiment of the present disclosure.

FIG. 3 is a schematic side view of the semiconductor device including aterminal according to an embodiment of the present disclosure.

FIG. 4 is a schematic cross-sectional view taken along line IV-IV inFIG. 1 .

FIG. 5 is an enlarged schematic cross-sectional view of a portion of theschematic cross-sectional view illustrated in FIG. 4 .

FIGS. 6A to 6C are schematic cross-sectional views illustrating a methodof manufacturing a semiconductor device including a terminal accordingto an embodiment of the present disclosure, wherein FIG. 6A is a processof forming a conductive layer, FIG. 6B is a process of forming a resin,and FIG. 6C is a process of grinding the resin.

FIGS. 7A to 7C are schematic cross-sectional views illustrating a methodof manufacturing a semiconductor device including a terminal accordingto an embodiment of the present disclosure, wherein FIG. 7A is a processof forming a wiring layer, FIG. 7B is a process of forming asemiconductor element, and FIG. 7C is a process of forming a conductivelayer.

FIGS. 8A and 8B are schematic cross-sectional views illustrating amethod of manufacturing a semiconductor device including a terminalaccording to an embodiment of the present disclosure, wherein FIG. 8A isa process of forming a resin and FIG. 8B is a process of cutting asupport base material.

FIGS. 9A and 9B are schematic cross-sectional views illustrating amethod of manufacturing a semiconductor device including a terminalaccording to an embodiment of the present disclosure, wherein FIG. 9A isa process of grinding a support base material and FIG. 9B is a processof forming a conductive bonding layer.

FIG. 10 is an enlarged schematic cross-sectional view of a portion ofthe schematic cross-sectional view illustrated in FIG. 4 .

FIG. 11 is a view illustrating a positional relationship between aconnection surface of an external electrode and a resin rear surface.

FIG. 12 is a schematic cross-sectional view of a semiconductor deviceincluding a terminal according to another embodiment of the presentdisclosure.

FIG. 13 is a schematic cross-sectional view illustrating a method ofmanufacturing a semiconductor device including a terminal according toanother embodiment of the present disclosure, which is a process ofgrinding a support base material.

FIGS. 14A and 14B are schematic cross-sectional views illustrating amethod of manufacturing a semiconductor device including a terminalaccording to another embodiment of the present disclosure, wherein FIG.14A is a process of removing a portion of a conductive layer 12, aportion of wiring layer 14, a portion of conductive layer 16, and aportion of resin, and FIG. 14B is a process of forming a conductivebonding layer.

DETAILED DESCRIPTION

Reference will now be made in detail to various embodiments, examples ofwhich are illustrated in the accompanying drawings. In the followingdetailed description, numerous specific details are set forth in orderto provide a thorough understanding of the present disclosure. However,it will be apparent to one of ordinary skill in the art that the presentdisclosure may be practiced without these specific details. In otherinstances, well-known methods, procedures, systems, and components havenot been described in detail so as not to unnecessarily obscure aspectsof the various embodiments.

Embodiments of the present disclosure will now be described withreference to the drawings. In the following description of the drawings,like or similar parts are denoted by like or similar reference numerals.However, it should be noted that the drawings are schematic and that therelationships between thicknesses and planar dimensions, and the like ofrespective components are different from those of reality. Therefore,specific thicknesses or dimensions should be determined in considerationof the following description. Also, it is understood that parts havingdifferent dimensional relationships or ratios are included among thedrawings.

Further, the embodiments described below are presented to illustrateapparatuses or methods for embodying the technical concept of thepresent disclosure and are not intended to specify the materials,features, structures, arrangements, and the like of the components. Theembodiments may be variously modified without departing from the scopeof the accompanying claims.

One aspect of the present disclosure is as follows.

[1] A terminal includes: a first conductive layer; a wiring layer on thefirst conductive layer; a second conductive layer on the wiring layer;and a conductive bonding layer which is in contact with a bottom surfaceand a side surface of the first conductive layer, a side surface of thewiring layer, a portion of a side surface of the second conductivelayer, and a portion of a bottom surface of the second conductive layer,wherein an end portion of the second conductive layer protrudes from anend portion of the first conductive layer and an end portion of thewiring layer, and wherein the conductive bonding layer is in contactwith a bottom surface of the end portion of the second conductive layer.

[2] In the terminal of [1], the second conductive layer is thicker thanthe first conductive layer, and the wiring layer is thinner than thefirst conductive layer.

[3] In the terminal of [1] or [2], a distance between the bottom surfaceof the first conductive layer and the bottom surface of the end portionof the second conductive layer is 100 μm or more.

[4] In the terminal of any one of [1] to [3], the end portion of thesecond conductive layer protrudes 10 to 20 μm.

[5] In the terminal of any one of [1] to [4], the conductive bondinglayer includes: a Ni layer which is in contact with the bottom surfaceof the first conductive layer, the side surface of the wiring layer, aportion of the side surface of the second conductive layer, and aportion of the bottom surface of the second conductive layer; and an Aulayer overlapping with the Ni layer.

[6] In the terminal of any one of [1] to [5], an average surfaceroughness of a top surface of the second conductive layer is 2 to 5 μm.

[7] In the terminal of any one of [1] to [6], a material of the firstconductive layer is identical to a material of the second conductivelayer.

[8] In the terminal of any one of [1] to [7], the first conductive layercontains copper, the wiring layer contains titanium or tantalum nitride,and the second conductive layer contains copper.

[9] In the terminal of any one of [1] to [8], the end portion of thewiring layer is covered with a material of the first conductive layerand a material of the second conductive layer.

[10] A semiconductor device includes: a terminal; a semiconductorelement electrically connected to the terminal; and a resin covering theterminal and the semiconductor element, wherein the terminal includes: afirst conductive layer; a second conductive layer; a wiring layerbetween the first conductive layer and the second conductive layer; anda conductive bonding layer which is in contact with the first conductivelayer, the wiring layer, and the second conductive layer, wherein an endportion of the second conductive layer protrudes from an end portion ofthe first conductive layer and an end portion of the wiring layer, andwherein the conductive bonding layer is in contact with the end portionof the second conductive layer.

[11] In the semiconductor device of [10], the second conductive layer isthicker than the first conductive layer, and the wiring layer is thinnerthan the first conductive layer.

[12] In the semiconductor device of [10] or [11], a distance between abottom surface of the first conductive layer and a bottom surface of theend portion of the second conductive layer is 100 μm or more.

[13] In the semiconductor device of any one of [10] to [12], the endportion of the second conductive layer protrudes 10 to 20 μm.

[14] In the semiconductor device of any one of [10] to [13], theconductive bonding layer includes a Ni layer which is in contact withthe first conductive layer, the wiring layer, and the second conductivelayer; and an Au layer overlapping with the Ni layer.

[15] In the semiconductor device of any one of [10] to [14], an averagesurface roughness of a top surface of the second conductive layer is 2to 5 μm.

[16] In the semiconductor device of any one of [10] to [15], a materialof the first conductive layer is identical to a material of the secondconductive layer.

[17] In the semiconductor device of any one of [10] to [16], the firstconductive layer contains copper, the wiring layer contains titanium ortantalum nitride, and the second conductive layer contains copper.

[18] In the semiconductor device of any one of [10] to [17], the endportion of the wiring layer is covered with a material of the firstconductive layer and a material of the second conductive layer.

[19] In the semiconductor device of any one of [10] to [18], an outerside surface of the second conductive layer is exposed.

[20] A method of manufacturing a terminal includes: forming a firstconductive layer; forming a first resin covering the first conductivelayer; grinding the first resin to expose a top surface of the firstconductive layer; forming a wiring layer which is in contact with thefirst conductive layer; forming a second conductive layer on the wiringlayer; forming a second resin which covers the first resin, the wiringlayer, and the second conductive layer; removing a portion of the firstconductive layer, a portion of the wiring layer, a portion of the secondconductive layer, and a portion of the second resin, so that an endportion of the second conductive layer protrudes from an end portion ofthe first conductive layer and an end portion of the wiring layer; andforming a conductive bonding layer which is in contact with the firstconductive layer, the wiring layer, and the second conductive layer.

[21] In the method of manufacturing the terminal of [20], the secondconductive layer is thicker than the first conductive layer, and thewiring layer is thinner than the first conductive layer.

[22] In the method of manufacturing the terminal of [20] or [21], adistance between a bottom surface of the first conductive layer and abottom surface of the end portion of the second conductive layer is 100μm or more.

[23] In the method of manufacturing the terminal of any one of [20] to[22], an outer side surface of the second conductive layer is exposed.

[24] A method of manufacturing a semiconductor device includes themethod of manufacturing the terminal of any one of [20] or [23]; andforming a semiconductor element electrically connected to the wiringlayer after forming the wiring layer and before forming the secondconductive layer.

First Embodiment

A terminal and a method of manufacturing the same according to anembodiment of the present disclosure will be described with reference tothe drawings.

FIGS. 1 to 5 illustrate a semiconductor device including a terminalaccording to an embodiment of the present disclosure. The semiconductordevice including a terminal according to an embodiment of the presentdisclosure includes an internal electrode 2, an external electrode 18, aresin 20, a conductive bonding layer 22, a semiconductor element 24, andan insulating layer 41.

FIG. 1 is a schematic plane view of a semiconductor device including aterminal according to an embodiment of the present disclosure, FIG. 2 isa schematic bottom view of the semiconductor device including theterminal according to an embodiment of the present disclosure, FIG. 3 isa schematic side view of the semiconductor device including the terminalaccording to an embodiment of the present disclosure, FIG. 4 is aschematic cross-sectional view taken along line IV-IV in FIG. 1 , andFIG. 5 is an enlarged schematic cross-sectional view of a portion of theschematic cross-sectional view illustrated in FIG. 4 .

First, the semiconductor device including the terminal according to thepresent embodiment will be described with reference to FIGS. 1 to 5 .

The semiconductor device including the terminal according to the presentembodiment includes a terminal, a semiconductor element 24 electricallyconnected to the terminal via a conductive bonding layer 22, and a resin20 covering the terminal and the semiconductor element 24, wherein theterminal includes a conductive layer 12, a wiring layer 14 on theconductive layer 12, a conductive layer 16 on the wiring layer 14, andan external electrode 18 which is in contact with a bottom surface and aside surface of the conductive layer 12, a side surface of the wiringlayer 14, a portion (side surface 16 d) of the side surface of theconductive layer 16, and a portion (bottom surface 16 c) of the bottomsurface of the conductive layer 16. Further, the conductive bondinglayer 22 is installed on the wiring layer 14 to be in contact therewith.In addition, the conductive layer 12, the wiring layer 14, and theconductive layer 16 will be generally referred to as the internalelectrode 2.

In the present disclosure, the external electrode is described as aportion of the terminal, but the present disclosure may not be limitedthereto and the external electrode may be interpreted not to be includedas a portion of the terminal.

The semiconductor device is a package mounted on a circuit board ofvarious electronic devices or the like. The semiconductor device has arectangular shape, as illustrated in FIGS. 1 and 2 . The semiconductordevice including the terminal according to the present embodiment is aso-called SON package type.

The semiconductor element 24 is an element that serves as a functionalcenter of the semiconductor device. The semiconductor element 24 is, forexample, an integrated circuit (IC) such as large scale integration(LSI) or the like. Further, the semiconductor element 24 may be avoltage control element such as low drop out (LDO), an amplificationelement such as an operational amplifier, and a discrete semiconductorelement such as a capacitor, a transistor or a diode. The semiconductorelement 24 has a rectangular shape. The semiconductor element 24 ismounted on the internal electrode 2. The semiconductor element 24overlaps with the insulating layer 41. The semiconductor element 24 ismounted by flip chip bonding (FCB).

The semiconductor element 24 has an element front surface 24 a and anelement rear surface 24 b. Both the element front surface 24 a and theelement rear surface 24 b are flat. As illustrated in FIG. 5 , aplurality of electrode pads 13 and an insulating layer 41 are formed onthe element rear surface 24 b. Each of the plurality of electrode pads13 has a rectangular shape. As illustrated in FIG. 5 , each electrodepad 13 is configured by a conductive bonding material 44, which is apart of the conductive bonding layer 22, and a seed layer 42, and isbonded to the conductive bonding material 44. Each electrode pad 13includes a first conductive portion 131 and a second conductive portion132.

The first conductive portion 131 is made of, for example, aluminum. Thesecond conductive portion 132 is configured by a titanium (Ti) layer anda copper (Cu) layer which are stacked on each other. In the secondconductive portion 132, the Cu layer is in contact with the firstconductive portion 131. By installing the second conductive portion 132in the electrode pad 13, it is possible to prevent the first conductiveportion 131 made of aluminum from penetrating into the conductivebonding material 44.

The insulating layer 41 is a protective film of the semiconductorelement 24 formed to cover the element rear surface 24 b. The insulatinglayer 41 is, for example, a layer in which a silicon nitride layerformed by a chemical vapor deposition (CVD) method and a polyimide resinlayer or a polybenzoxazole (PBO) resin layer formed by coating arestacked on each other. The insulating layer 41 is opened in multipleportions, and the electrode pads 13 are respectively exposed from theopened portions. Furthermore, the positions of the electrode pads 13 maynot be limited to those described above, and for example, the electrodepads 13 may be buried in the insulating layer 41 to be in contact withthe element rear surface 24 b.

As the seed layer 42, for example, a layer having titanium or tantalumnitride as a main component and a thickness of 100 to 800 nm may beused. The conductive bonding material 44 is a conductive memberinterposed between the seed layer 42 and the semiconductor element 24.In the present embodiment, the conductive bonding material 44 isconfigured so that a Ni layer, a solder layer, a Ni layer, and a Culayer are installed sequentially from a side that is in contact with theseed layer 42. The solder layer is made of an alloy containing Sn (tin).This alloy may include, for example, a lead-free solder such as a Sn—Sbbased alloy, a Sn—Ag based alloy or the like, and a lead-containingsolder.

As the conductive layer 12, for example, a layer having copper as a maincomponent and a thickness of 20 to 50 μm may be used. The conductivelayer 12 may be formed by a physical vapor deposition (PVD) method orthe like such as a sputtering method. A side surface 12 a of theconductive layer 12 is in contact with the external electrode 18.Alternatively, the conductive layer 12 may be formed on the seed layer.As the seed layer, for example, a layer having titanium or tantalumnitride as a main component and a thickness of 100 to 800 nm may beused. The materials, thicknesses, and forming methods of the conductivelayer 12 and the seed layer may not be limited to those described above.

The wiring layer 14 functions as a seed layer of the conductive layer16. The wiring layer 14 may be formed by a PVD method or the like. Asthe wiring layer 14, for example, a layer having titanium or tantalumnitride as a main component and a thickness of 100 to 800 nm, or a layerobtained by further stacking a Cu layer on the layer may be used. Thematerial, thickness, and forming method of the wiring layer 14 may notbe limited to those described above.

As the conductive layer 16, for example, a layer having copper as a maincomponent and a thickness of 40 to 100 μm, which is thicker than that ofthe conductive layer 12, may be used. The conductive layer 16 may beformed by a plating method or the like. The material of the conductivelayer 16 may be identical to the material of the conductive layer 12.

Further, one end portion of the conductive layer 16 protrudes from theend portion of the conductive layer 12 and the end portion of the wiringlayer 14. That is, the terminal according to the present embodiment isconfigured to be uneven. In such a configuration, even if the sidesurface 12 a of the conductive layer 12 on the end portion side where aportion of the conductive layer 16 protrudes, a side surface of thewiring layer 14, and a side surface 16 d of the conductive layer 16 in aregion that does not protrude (hereinafter, referred to as an endsurface) become uneven due to oxidation or the like, since the externalelectrode 18 is formed to be in contact with the end surfaces and abottom surface 16 c of the end portion of the conductive layer 16, itmay be configured such that the end surface is not visible from anoutside of the terminal or the semiconductor device including theterminal while suppressing adhesion failure with the conductive bondingmaterial such as solder or the like and securing reliability.

Furthermore, a top surface 16 a of the conductive layer 16 is rougherthan an outer side surface 16 b. The top surface 16 a of the conductivelayer 16 does not need to be flat because it is covered with the resin20, and for example, an average surface roughness of the top surface 16a of the conductive layer 16 is desirably 2 to 5 μm. When the topsurface 16 a of the conductive layer 16 is rough, the resin 20 entersinto fine irregularities on the top surface of the conductive layer 16and then is cured, thereby improving the adhesion. In addition, theaverage surface roughness may be obtained according to, for example, JISB 0601:2013 or ISO 25178.

In addition, in the terminal according to the present embodiment, adistance D between the bottom surface of the conductive layer 12 and thebottom surface of the end portion of the conductive layer 16 is 100 μmor more, and the distance D may be 100 to 150 μm. Further, in theterminal according to the present embodiment, a width W of theprotruding end portion of the conductive layer 16 is 10 μm or more, andmay be 10 to 20 μm from the viewpoint of cost.

The external electrode 18 is electrically connected to be in contactwith the conductive layer 12, the wiring layer 14, and the conductivelayer 16, and a connection surface 18 a is exposed to an outside. Theexternal electrode 18 functions as a terminal used when thesemiconductor device is mounted on the circuit board. The externalelectrode 18 may be formed by a plating method or the like. In theterminal according to the present embodiment, the external electrode 18is configured by a Ni layer, a Pd layer, and an Au layer. The Ni layeris in contact with the end surface, and has a thickness of 3 μm. In thecase where the main components of the conductive layer 12 and theconductive layer 16 are copper, when the solder used for electricalconnection to an external device is directly bonded, the copper and thesolder may form an alloy to generate a void. In order to suppress thegeneration of the alloy of copper and solder, the Ni layer functioningas a barrier layer may be installed. The Au layer is exposed to anoutside as the connection surface 18 a, and has a thickness of 0.01 to0.02 μm. The Au layer is desirable because it has excellent adhesion tosolder. Further, the Pd layer is located between the Ni layer and the Aulayer, and has a thickness of 0.01 to 0.02 μm. The Pd layer alsofunctions as a barrier layer for suppressing the generation of the alloyof copper and solder, but when the generation of the alloy of copper andsolder can be sufficiently suppressed by only the Ni layer, the Pd layermay not be installed. The material, thickness, and forming method of theexternal electrode 18 may not be limited to those described above.

As the resin 20, for example, a synthetic resin containing an epoxyresin as a main component, a polyimide resin, or the like may be used.As illustrated in FIG. 4 , the resin 20 covers the conductive layer 12,the wiring layer 14, and the conductive layer 16 which are thecomponents of the terminal according to the present embodiment.

The resin 20 has a resin front surface 20 c, a resin rear surface 20 d1, a resin rear surface 20 d 2, a resin interface 20 e, and a resin sidesurface 20 f The resin front surface 20 c, the resin rear surface 20 d1, the resin rear surface 20 d 2, and the resin interface 20 e are allflat. The resin interface 20 e is an interface made of a resin 20 a anda resin 20 b.

A method of manufacturing the terminal and a method of manufacturing asemiconductor element including the terminal according to the presentembodiment will now be described with reference to FIGS. 6A to 9B.

First, as illustrated in FIG. 6A, a support base material 10 isprepared, and a conductive layer 12 is formed on the support basematerial 10. As the support base material 10, for example, a glasssubstrate, a silicon substrate, or the like may be used. In the presentembodiment, the silicon substrate is used as the support base material10. The conductive layer 12 contains copper as a main component, and isformed by a sputtering method. In a process of forming the conductivelayer 12, first, a resist is patterned on a conductive film to be theconductive layer 12 by photolithography. A portion of the conductivefilm to be the conductive layer 12 is removed using the patterned resistto form the conductive layer 12. Then, the conductive layer 12illustrated in FIG. 6A is formed by removing the resist.

Next, as illustrated in FIG. 6B, a resin 20 a covering the support basematerial 10 and the conductive layer 12 is formed. The resin 20 acorresponds to a portion of the resin 20 described above. As the resin20 a in the present embodiment, a resin having electrical insulation,for example, a synthetic resin containing an epoxy resin as a maincomponent, a polyimide resin, or the like, may be used.

Next, as illustrated in FIG. 6C, the resin 20 a is ground using agrindstone or the like to expose a top surface of the conductive layer12. A top surface of the ground resin 20 a becomes a resin interface 20e with a resin 20 b to be formed later.

Next, as illustrated in FIG. 7A, a wiring layer 14 is formed to be incontact with the entire top surface of the conductive layer 12 and aportion of the top surface (resin interface 20 e) of the ground resin 20a. In the present embodiment, the wiring layer 14 contains titanium as amain component, and is formed by a sputtering method. In a process offorming the wiring layer 14, first, a resist is patterned on aconductive film to be the wiring layer 14 by photolithography. A portionof the conductive film to be the wiring layer 14 is removed by using thepatterned resist to form the wiring layer 14. Then, the wiring layer 14illustrated in FIG. 7A is formed by removing the resist.

Next, as illustrated in FIG. 7B, a conductive bonding layer 22 is formedon the wiring layer 14. In the present embodiment, the conductivebonding layer 22 is formed of a seed layer and a conductive bondingmaterial, as described above. As the seed layer in the conductivebonding layer 22, for example, a layer having titanium or tantalumnitride as a main component and a thickness of 100 to 800 nm may beused. The conductive bonding material in the conductive bonding layer 22is formed of a Ni layer and a lead-free solder layer such as a Sn—Sbbased alloy, a Sn—Ag based alloy or the like which is in contact withthe Ni layer, and is formed by a plating method. In a process of formingthe conductive bonding layer 22, first, a resist is patterned on aconductive film to be the conductive bonding layer 22 byphotolithography. A portion of the conductive film to be the conductivebonding layer 22 is removed by using the patterned resist to form theconductive bonding layer 22. Thereafter, the conductive bonding layer 22illustrated in FIG. 7B is formed by removing the resist.

Next, a semiconductor element 24 which is in contact with the conductivebonding layer 22 is mounted. An element rear surface 24 b of thesemiconductor element 24 is in contact with the conductive bonding layer22. In the present embodiment, a process of mounting the semiconductorelement 24 is performed by FCB. A flux is applied to the electrode pads13 of the semiconductor element 24, and then the semiconductor element24 is temporarily adhered to the conductive bonding layer 22 whilefacing the wiring layer 14 by using a flip chip bonder. At this time,the conductive bonding layer 22 is sandwiched between the wiring layer14 and the semiconductor element 24. Next, the conductive bonding layer22 is melted by reflow, and then the conductive bonding layer 22 issolidified by cooling, whereby the mounting of the semiconductor element24 is completed.

Next, as illustrated in FIG. 7C, a conductive layer 16 is formed on thewiring layer 14. In the present embodiment, the conductive layer 16contains copper as a main component, and is formed by a plating method.In a process of forming the conductive layer 16, first, a resist ispatterned on a conductive film to be the conductive layer 16 byphotolithography. A portion of the conductive film to be the conductivelayer 16 is removed by using the patterned resist to form the conductivelayer 16. Then, the conductive layer 16 illustrated in FIG. 7C is formedby removing the resist.

Further, the side surface of the conductive layer 16 illustrated in FIG.7C is roughly aligned with the side surface of the conductive layer 12,but the present disclosure may not be limited thereto. In a laterprocess, since the side surface of the conductive layer 12 and the sidesurface of the conductive layer 16 are processed, the side surface ofthe conductive layer 16 and the side surface of the conductive layer 12may not need to be aligned and, for example, may be configured so thatthe side surface of the conductive layer 16 does not overlap with theconductive layer 12 (the outer side surface 16 b of the conductive layer16 of the end portion side, where a portion of the conductive layer 16to be described later protrudes, protrudes from the side surface 12 a ofthe conductive layer 12).

When forming the conductive layer 16, fine irregularities may be formedon a top surface thereof. By such fine irregularities, the resin 20 b tobe formed in a subsequent process is entered and cured, therebyimproving the adhesiveness.

By forming the conductive layer 12 and the conductive layer 16separately, a conductive layer having a thickness of 100 μm or more canbe formed, and the support base material 10 can be prevented from beingwarped when forming the conductive layer. Thus, it is possible tosuppress adhesion failure between the terminal and the resin accordingto the present embodiment.

Next, as illustrated in FIG. 8A, the resin 20 b, which covers the resin20 a, the wiring layer 14, the conductive layer 16, the conductivebonding layer 22, and the semiconductor element 24, is formed. The resin20 b corresponds to a portion of the resin 20 described above. That is,the combination of the resin 20 a and the resin 20 b described abovecorresponds to the resin 20. Furthermore, in this process, the resininterface 20 e is formed. As the resin 20 b in the present embodiment, aresin having electrical insulation, for example, a synthetic resincontaining an epoxy resin as a main component, a polyimide resin, or thelike, may be used.

Next, as illustrated in FIG. 8B, the support base material 10 is cut bya circle cut using a cutting blade or the like.

Next, as illustrated in FIG. 9A, the support base material 10 isremoved. The support base material 10 may be removed by, for example,grinding by a grindstone or the like. Further, after the removal, adicing tape (not shown) is attached to the resin 20 before the removal.

Next, as illustrated in FIG. 9B, a portion of the conductive layer 12, aportion of the wiring layer 14, a portion of the conductive layer 16,and a portion of the resin 20 are removed so that the end portion of theconductive layer 16 protrudes from the end portion of the conductivelayer 12 and the end portion of the wiring layer 14. The removal may beperformed by blade dicing or the like. Further, at this time, the dicingtape is not completely cut by blade dicing or the like. Therefore,although not shown, even when the resin is divided into individualpieces for each semiconductor element, they are not separated intopieces because they are connected by the dicing tape.

Next, end surfaces of the terminal (the side surface 12 a of theconductive layer 12 at the end portion side where a portion of theconductive layer 16 protrudes, the side surface of the wiring layer 14,and the side surface 16 d of the conductive layer 16 in a region thatdoes not protrude), and the external electrode 18, which is in contactwith the bottom surface 16 c of the end portion of the conductive layer16, are formed. Further, in order to etch the conductive layer 12 andthe conductive layer 16 by 0.5 to 3 μm before the external electrode 18is formed, the connection surface 18 a of the external electrode 18 islocated below the resin rear surface 20 d 1 and the resin rear surface20 d 2 of the resin 20 and is exposed to the outside, as illustrated inFIG. 11 . In the present embodiment, the external electrode 18 is formedby a plating method. Specifically, the external electrode 18sequentially precipitates the Ni layer, the Pd layer, and the Au layer.

The semiconductor device including the terminal according to the presentembodiment can be manufactured according to the aforementionedprocesses.

Further, when removing a portion of the conductive layer 12, the wiringlayer 14, the conductive layer 16, and the resin 20 by blade dicing, inthe region 30 illustrated in FIG. 4 , there are cases where the metalhaving the material of the conductive layer 12 and the material of theconductive layer 16, which have a hardness smaller than that of themetal that is the material of the wiring layer 14, may extend to form aregion 15 which covers the end portion 14 a of the wiring layer 14 asillustrated in FIG. 10 .

According to the present embodiment, the semiconductor device thatsuppresses adhesion failure and secures reliability can be provided.With the configuration of the present embodiment, it is possible tosufficiently secure the distance D of the contact portion between theexternal electrode 18 formed on the side surface of the semiconductordevice and the end surface of the terminal. When mounting thesemiconductor device on the circuit board or the like, solder is used,but if the distance D is not sufficiently secured, it is difficult toform solder fillet. In the semiconductor device according to the presentembodiment, since the distance D can be sufficiently secured, the solderfillet can be easily formed when mounting the semiconductor device onthe circuit board or the like. Thus, it is possible to increase themounting strength of the semiconductor device on the circuit board.Furthermore, by performing a visual inspection on the connection stateof the solder, a determination on whether the semiconductor device is agood product is facilitated. Thus, it is possible to improve the yieldof the semiconductor device and to improve the reliability.

Second Embodiment

In this embodiment, a method of manufacturing a semiconductor deviceincluding a terminal, which is different from the first embodiment, willbe described with reference to the drawings.

In this embodiment, different parts from the first embodiment will bedescribed. That is, the description of the first embodiment can beapplied to the parts which are not specifically described in the presentembodiment.

As illustrated in FIG. 12 , the semiconductor device including aterminal according to the present embodiment includes a terminal, asemiconductor element 24 electrically connected to the terminal via aconductive bonding layer 22, and a resin 20 covering the semiconductorelement 24. The terminal includes a conductive layer 12, a wiring layer14 on the conductive layer 12, and an external electrode which is incontact with a bottom surface and a side surface of the conductive layer12, a side surface of the wiring layer 14, a portion (side surface 16 d)of the side surface of the conductive layer 16, and a portion (bottomsurface 16 c) of the bottom surface of the conductive layer 16, on thewiring layer 14. Further, a conductive bonding layer 22 is installed onthe wiring layer 14 to be in contact therewith. In addition, the outerside surface 16 b of the conductive layer 16 is exposed, and a resinside surface 20 f and the outer side surface 16 b are substantiallyaligned.

Since the outer side surface 16 b of the conductive layer 16 is exposedand the resin side surface 20 f and the outer side surface 16 b aresubstantially aligned, when performing a visual inspection, the resin 20b does not interfere with the inspection. Thus, the determination onwhether the semiconductor device is a good product is facilitated.Therefore, it is possible to improve the yield of the semiconductordevice and to improve the reliability.

Here, a method of manufacturing the semiconductor device including theterminal according to the present embodiment will be described withreference to FIGS. 13 and 14B.

After following the process illustrated in FIG. 6A to FIG. 8A accordingto the first embodiment described above, the support base material 10 isremoved as shown in FIG. 13 . The support base material 10 may beremoved by, for example, grinding by a grindstone or the like. Further,after the removal, a dicing tape (not shown) is attached to the resin 20before the removal.

Next, as illustrated in FIG. 14A, a portion of the conductive layer 12,a portion of the wiring layer 14, a portion of the conductive layer 16,and a portion of the resin 20 are removed so that the end portion of theconductive layer 16 protrudes from the end portion of the conductivelayer 12 and the end portion of the wiring layer 14. The removal may beperformed by blade dicing or the like. Furthermore, at this time, aportion of the resin 20 is removed to expose the outer side surface 16 bof the conductive layer 16. As a result, the resin is separated intoindividual semiconductor elements, although not shown in the figure.

Next, as illustrated in FIG. 14B, end surfaces of the terminal (the sidesurface 12 a of the conductive layer 12 at the end portion side where aportion of the conductive layer 16 protrudes, the side surface of thewiring layer 14, and the side surface 16 d of the conductive layer 16 ina region that does not protrude), and the external electrode 18, whichis in contact with the bottom surface 16 c at the end portion of theconductive layer 16, are formed.

By the above process, the semiconductor device including the terminalaccording to the present embodiment can be manufactured.

Furthermore, similar to the first embodiment, a region 15, which coversthe end portion 14 a of the wiring layer 14 as illustrated in FIG. 10 ,is formed by blade dicing.

According to the present embodiment, the semiconductor device thatsuppresses the adhesion failure and secures the reliability can beprovided. With the configuration of the present embodiment, it ispossible to sufficiently secure the distance D of the contact portionbetween the external electrode 18 formed on the side surface of thesemiconductor device and the end surface of the terminal. When mountingthe semiconductor device on the circuit board or the like, solder isused, but if the distance D is not sufficiently secured, it is difficultto form solder fillet. In the semiconductor device according to thepresent embodiment, since the distance D can be sufficiently secured,the solder fillet can be easily formed when mounting the semiconductordevice on the circuit board or the like. Thus, it is possible toincrease the mounting strength of the semiconductor device on thecircuit board. Since the outer side surface 16 b of the conductive layer16 is exposed and the resin side surface 20 f and the outer side surface16 b are substantially aligned, when performing a visual inspection, theresin 20 b does not interfere with the inspection. Thus, thedetermination on whether the semiconductor device is a good product isfacilitated. Therefore, it is possible to improve the yield of thesemiconductor device and to improve the reliability.

Other Embodiments

Although some embodiments have been described as discussed above, itshould be understood that the description and drawings constituting apart of the present disclosure are merely illustrative and not limited.From this disclosure, various alternative embodiments, examples, andoperation techniques will be apparent to those of ordinary skill in theart. As described above, the present embodiment includes variousembodiments not described herein, such as a configuration in which therespective embodiments are combined.

The terminal and the semiconductor device according to the presentembodiments can be used in various fields such as in-vehicle equipment,household appliances, medical equipment and the like. In particular, theterminal and the semiconductor device according to the presentembodiments can be used in an in-vehicle wettable flank package toimprove the functions, performance, quality, reliability, andconvenience.

Aspects of Present Disclosure

Hereinafter, some aspects of the present disclosure will be additionallydescribed as supplementary notes.

(Supplementary Note 1)

According to one aspect of the present disclosure, a method ofmanufacturing a terminal includes: forming a first conductive layer;forming a first resin covering the first conductive layer; grinding thefirst resin to expose a top surface of the first conductive layer;forming a wiring layer which is in contact with the first conductivelayer; forming a second conductive layer on the wiring layer; forming asecond resin which covers the first resin, the wiring layer, and thesecond conductive layer; removing a portion of the first conductivelayer, a portion of the wiring layer, a portion of the second conductivelayer, and a portion of the second resin so that an end portion of thesecond conductive layer protrudes from an end portion of the firstconductive layer and an end portion of the wiring layer; and forming aconductive bonding layer which is in contact with the first conductivelayer, the wiring layer, and the second conductive layer.

(Supplementary Note 2)

In the method of manufacturing a terminal of Supplementary Note 1, thesecond conductive layer is thicker than the first conductive layer, andthe wiring layer is thinner than the first conductive layer.

(Supplementary Note 3)

In the method of manufacturing a terminal of Supplementary Note 1, adistance between a bottom surface of the first conductive layer and abottom surface of the end portion of the second conductive layer is 100μm or more.

(Supplementary Note 4)

In the method of manufacturing a terminal of Supplementary Note 1, anouter side surface of the second conductive layer is exposed.

(Supplementary Note 5)

According to another aspect of the present disclosure, a method ofmanufacturing a semiconductor device includes: the method ofmanufacturing the terminal of Supplementary Note 1; and forming asemiconductor element electrically connected to the wiring layer afterforming the wiring layer and before forming the second conductive layer.

According to the present disclosure in some embodiments, it is possibleto provide a terminal for external connection which suppresses adhesionfailure and secures reliability, a semiconductor device including theterminal, and a method of manufacturing the terminal.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the disclosures. Indeed, the embodiments described herein maybe embodied in a variety of other forms. Further, various omissions,substitutions and changes in the form of the embodiments describedherein may be made without departing from the spirit of the disclosures.The accompanying claims and their equivalents are intended to cover suchforms or modifications as would fall within the scope and spirit of thedisclosures.

What is claimed is:
 1. A semiconductor device, comprising: an internalelectrode; a semiconductor element electrically connected to theinternal electrode; and a resin covering the internal electrode and thesemiconductor element, wherein the semiconductor element includes: afirst electrode; and a conductive bonding layer on the internalelectrode, wherein the internal electrode includes: a wiring layerportion to which the semiconductor element is mounted by flip chipbonding with the conductive bonding layer of the semiconductor element;a first conductive portion which is located below the wiring layerportion and is located on an opposite side of the semiconductor elementwith respect to the wiring layer portion; and a second conductiveportion which is located over the first conductive portion and iselectrically connected to both of the first conductive portion and thewiring layer portion, and wherein an end portion of the secondconductive portion protrudes from an end portion of the first conductiveportion by 10 μm or more in a lateral direction.
 2. The semiconductordevice of claim 1, wherein the second conductive portion includes aconvexly protruding portion.
 3. The semiconductor device of claim 1,wherein the end portion of the second conductive portion protrudes 10 to20 μm.
 4. The semiconductor device of claim 1, wherein a distancebetween a bottom surface of the first conductive portion and a bottomsurface of the end portion of the second conductive portion is 100 μm ormore.
 5. The semiconductor device of claim 1, wherein the secondconductive portion is thicker than the first conductive portion.
 6. Thesemiconductor device of claim 1, wherein the wiring layer portion isthinner than the first conductive portion.
 7. The semiconductor deviceof claim 1, wherein an end portion of the wiring layer portion iscovered with a material of the first conductive portion and a materialof the second conductive portion.
 8. The semiconductor device of claim1, further comprising: an external electrode that is in physical contactwith the end portion of the first conductive portion.
 9. Thesemiconductor device of claim 8, wherein the external electrode includesa Ni layer, which is in contact with the first conductive portion, andincludes an Au layer over the Ni layer.
 10. The semiconductor device ofclaim 1, wherein an outer side surface of the second conductive portionis exposed.
 11. The semiconductor device of claim 10, wherein a sidesurface of the resin and the outer side surface of the second conductiveportion are substantially aligned.
 12. The semiconductor device of claim1, wherein the conductive bonding layer includes a solder layer.
 13. Thesemiconductor device of claim 12, wherein the conductive bonding layerfurther includes a Cu layer.
 14. The semiconductor device of claim 1,wherein the first conductive portion contains copper, and the secondconductive portion contains copper.
 15. The semiconductor device ofclaim 14, wherein the wiring layer portion contains titanium or tantalumnitride.
 16. The semiconductor device of claim 1, wherein an oppositepart of the wiring layer portion to which the semiconductor element ismounted is covered by the resin and is not exposed.
 17. Thesemiconductor device of claim 1, wherein the semiconductor device isused as an in-vehicle wettable flank package semiconductor device. 18.The semiconductor device of claim 1, wherein a solder fillet is formedon a circuit board on which the semiconductor device is mounted.